High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz High Efficiency:65%typ.(175MHz) High Efficiency:65%typ.(520MHz) 2 3 (0.25) INDEX MARK (Gate) 0.2+/-0.05 F.

OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 6.0+/-0.15 1 4.9+/-0.15 1.0+/-0.05 FEATURES High power gain: Pout.

RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 6.0+/-0.15 1 4.9+/-0.15 1.0+/-0.05 FEATURES High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts